| 학회 |
한국재료학회 |
| 학술대회 |
2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 |
27권 1호 |
| 발표분야 |
특별심포지엄 3. 미래 LED 디스플레이재료 심포지엄-오거나이저: 이인환(고려대), 홍영준(세종대) |
| 제목 |
Universal and scalable route to fabricate GaN nanowire-based LED on glass substrate by MOCVD |
| 초록 |
In order to fabricate the cost-effective LEDs on larger scale, the most efficient approach is the growth of scalable and high crystal quality GaN nanowires on amorphous substrate, preferably glass. Here, for the first time, we have demonstrated the growth of GaN nanowire-based LEDs by MOCVD on an amorphous glass substrate. InGaN/GaN multiple quantum well shells are conformally grown on semipolar {11-22} growth facet of m-axial GaN core nanowires and resulted in reduced quantum confined Stark effect. The PL spectroscopy of the GaN core nanowire-ensemble reveals a very high crystal quality due to the dominant emission from the band-to-band transition and absence of a characteristic yellow luminescence. The QW emission wavelength was tuned from 460-670 nm. Furthermore, the temperature-dependent PL of the nanowire ensemble exhibits a very high internal quantum efficiency of 76.1%. Therefore, the ultrashort radiative lifetime of the carriers was in the range between 19 ps and 54 ps. The grown semipolar InGaN/GaN QW core-shell nanowires have been successfully fabricated into LEDs, showing the prospect of light emitters grown directly on glass substrates. These results emphasize the potential of our approach to grow high-crystal quality GaN nanowires on amorphous substrates for large scale production and various optical applications such as LEDs, solar cells, and photodetectors. |
| 저자 |
류상완1, Muhammad Ali Johar1, 송현규2, Aadil Waseem1, 조용훈2
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| 소속 |
1전남대, 2KAIST |
| 키워드 |
GaN; nanowire; core-shell; LED; InGaN.
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| E-Mail |
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