| 초록 |
We evaluate the effect of parylene-c layer as gate dielectric for top-gate organic field-effect transistors (OFETs) with indacenodithiophene-co-benzothiadiazole (IDTBT) as p-channel and poly([N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bitthiophene)) (P(NDI2OD-T2) as n-channel semiconductor. The single parylene-c film show low dielectric properties such as large gate leakage current density and low breakdown voltage. The decreased electrical properties of IDTBT and P(NDI2OD-T2) OFETs with parylene-c single dielectric layer are observed due to unwanted chemical reaction between parylene-c and conjugated polymer by X-ray photoelectron spectroscopy analysis. The improved dielectric characteristics of parylene-c and the improved electrical properties of IDTBT and P(NDI2OD-T2) OFETs are ahieved by inserting thin PMMA and PS layer in between parylene-c and conjugated polymer. |
