| 학회 |
한국재료학회 |
| 학술대회 |
2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 |
17권 1호 |
| 발표분야 |
F. Display and optic Materials and processing(디스플레이 및 광 재료) |
| 제목 |
Electrical and optical properties of amorphous tungsten-indium-zinc oxide films for an active channel layer in thin film transistors |
| 초록 |
Zn-based amorphous oxide semiconductors have recently attracted attention as channel layer materials for the applications in electronics, optoelectronics, and displays. Compared with conventional amorphous silicon thin-film transistors (TFTs), oxide TFTs have several advantages such as their low-temperature processing, high transparency, and good electrical properties, which is capable of high mobility. However, it is necessary to control the carrier concentration to allow well-behaved TFT characteristics. In this study, tungsten (W) was used as carrier generation suppressor. Amorphous tungsten-indium-zinc oxide (WIZO) composition spread films deposited by combinatorial radio frequency (rf) magnetron sputtering using indium-zinc oxide (10 wt.% ZnO-doped In2O3) and WO3 targets have been systematically investigated. W composition ratio [W/(W+In+Sn), at.%] was ranged between 3 ~ 30 at.%, which was controlled by rf power of each target. All the WIZO films showed amorphous structure regardless of the changes of W contents. Transmittance of the WIZO films in the wavelength range of visible light was confirmed above 88% regardless of the W composition. It was found that the sheet resistance of amorphous WIZO films increased with the increase in the W contents, reaching the maximum sheet resistance of 27 MΩ/□ at the W composition ratio of 30 at.%. Furthermore, it is noteworthy that the WIZO films could possibly decrease their carrier concentrations with maintaining Hall mobility and transmittance for an application of oxide thin-film transistors as a channel layer. |
| 저자 |
Byeong-Yun Oh1, Jae-Cheol Park1, Young-Jun Lee2, Joo-Hyung Kim3, Gi-Seok Heo2, Tae-Won Kim3, Kwang-Young Kim1
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| 소속 |
1Korea Institute of Industrial Technology (KITECH), 2Dept. of Electronic Engineering, 3Chosun Univ. |
| 키워드 |
Amorphous tungsten-indium-zinc oxide (WIZO) films; Active channel layer; Oxide thin-film transistors (TFTs); Combinatorial rf magnetron sputtering.
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| E-Mail |
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