| 학회 |
한국재료학회 |
| 학술대회 |
2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 |
19권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Metal Insulator transition driven by ultra-thin thickness of (Sr0.75,La0.25)TiO3 Films |
| 초록 |
The (Sr0.75, La0.25)TiO3 (SLTO) thin films with various thicknesses have been grown on Ti-O terminated SrTiO3 (100) substrate using Laser-Molecular Beam Epitaxy (Laser MBE). The film structure and topography were verified by atomic force microscopy (AFM) and high resolution x-ray diffraction with the synchrotron x-ray source. We have also investigated the orbital structure using x-ray absorption spectroscopy (XAS). The SLTO thin film exhibited thickness driven metal-insulator transition around 10 unit cells thickness. The SLTO thin films with insulating behavior showed Ti 3d band splitting. This orbital reconstruction could drive the metal-insulator transition. In optical conductivity, the spectral weight transfer from coherent part to incoherent part was observed when the film thickness was reduced. This result indicates the possibility of enhanced electron correlation in thin films. The metal-insulator transition driven by reducing thickness is possibly. induced by orbital reconstruction and strong electron-electron correlation. |
| 저자 |
KiTae Om1, EuiyoungChoi2, Yunsang Lee3, Jaichan Lee2
|
| 소속 |
1School of Advanced Materials Science and Engineering, 2Sungkyunkwan Univ., 3chool of Advanced Materials Science and Engineering |
| 키워드 |
orbital splitting |
| E-Mail |
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