| 학회 |
한국재료학회 |
| 학술대회 |
2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 |
19권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Electrical characterization of ZnO/NiO composite film prepared by PLD |
| 초록 |
ZnO-NiO thin films were deposited via a pulsed laser deposition (PLD) method on on Pt interdigital electrodes prepared on a quartz substrate. The IDEs had a finger width of 10 µm, a finger gap of 10 µm, and an overlap length of 500 µm. The samples were annealed at 600°C for 30 min. The presence of two oxide phases was confirmed by XRD. SEM images shows that the composite film is composed of nanocrystalline grains of 15~25 nm. The film thickness was 80 nm. The samples were mounted on a hot stage with electrical connection and impedance spectra were measured as a function of temperature up to 550°C and DC bias up to 4 V with AC 100 mV. The films were very resistive above GΩ below 200°C and the capacitance was as high as around 1 nF, which is larger than the geometric capacitance by 3~4 orders of magnitude. Impedance analyses reveal three independent resistive components, which have distinct resistance values. The activation energy of the major resistance component was found to be 0.7 eV. The smaller resistance components appear to exhibit similar temperature dependence. The major impedance components exhibited strong DC bias dependence at 500°C. The resistance decreased and the capacitance decreased, indicating Mott-Schottky electrical behavior. The dependence becomes less clear at lower temperature with increasing resistance. The interpretation of different impedance components will be attempted in view of the conduction mechanism in n-type ZnO and p-type NiO composite structure. |
| 저자 |
Dang-Thanh Nguyen1, Eui-Chol Shin2, Jee-Hoon Kim1, Jaehyun Moon2, Jong-Sook Lee1
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| 소속 |
1School of Materials Science and Engineering, 2Chonnam National Univ. |
| 키워드 |
ZnO/NiO composite; impedance spectroscopy; PLD
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| E-Mail |
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