| 초록 |
The fundamental aspects and applications of semiconducting transparent thin films are always an attractive and important fields in mordent material science. Belong in oxide material class; ZnO is a typical semiconductor has attracted much attention due to its interesting properties. Wurtzite crystal structure ZnO has direct and wide bandgap, high transparency, high temperature stability, high electrical carriers’ mobility, tunable electronic and phonon transport properties. Recently, ZnO and related materials have been concentrated studied as promising materials for wide range of applications in piezoelectric transducers, phosphors-transparent conducting films, high-power devices and thermoelectric devices. For all these applications or other basic researches, the film growth with high quality, particularly the growth of high crystalline films is crucial. In this work, we report the growth and characterization of crystalline epitaxial Ga-doped, In-doped and Ga, In co-doping grown on c-plane sapphire substrates. The effects of Ga doping level, In doping level and Ga, In co-doping level to the growth of ZnO films and to the structural properties of grown films were also studied. The morphology and structural properties of the films were characterized by in-situ observations via reflection high-energy diffraction (RHEED), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high-resolution x-ray diffraction (XRD). About the thermoelectric properties of these doped films, Seebeck coefficient, electrical conductivity and power factor were also investigated and compared. |
