| 학회 |
한국재료학회 |
| 학술대회 |
2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 |
13권 2호 |
| 발표분야 |
전자재료 |
| 제목 |
Electrical properties of LaVO3 thin films |
| 초록 |
LaVO3 thin films have been deposited on SrTiO3 and LaAlO3 substrate by pulsed laser deposition. The structure of LaVO3 thin films were measured by high-resolution x-ray diffraction. It indicated the epitaxial growth with (002) diffraction patterns on LaVO3 thin films and substrate. After the film growth, we measured electrical resistivity of LaVO3 thin films using van der Pauw geometry in the temperature range of 77 ~ 300 K. The resistivity vs temperature curve exhibited insulating behavior on LaAlO3 substrate. However, it exhibited metallic behavior on SrTiO3 substrate. To understand this phenomenon, we have investigated electronic reconstruction at the interface of the films and substrate. |
| 저자 |
Hyunkyu Ahn1, Jihyun Park2, Jaichan Lee1
|
| 소속 |
1School of Materials Science and Engineering, 2Sungkyunkwan Univ. |
| 키워드 |
Mott isulator; Thin film
|
| E-Mail |
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