| 학회 |
한국재료학회 |
| 학술대회 |
2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 |
27권 2호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Dependence of microwave dielectric properties on crystal structural characteristics of CaSiO3 |
| 초록 |
Effects of bond strength properties on microwave dielectric properties of two CaSiO3 polymorphs were investigated. β -CaSiO3 was prepared by glass ceramic method with 2-step heat treatment at 730oC for 3h and 900oC for 3h, while α -CaSiO3 was prepared by conventional solid state reaction at 1480oC for 3h. Although the degree of crystallinity of α -CaSiO3 (86%) was higher than that of β -CaSiO3 (79.3%), β -CaSiO3 showed higher Qf value (=52,600GHz) than that of α -CaSiO3 (=48,000GHz). To investigate the crystal structures of α-CaSiO3 and β-CaSiO3, Rietveld refinement method and FT-IR analysis were performed. α -CaSiO3 showed stronger Si-O bond strength (0.942) than that of β -CaSiO3 (0.893) while β -CaSiO3 showed a significant higher Ca-O bond strength (0.27) than that of α -CaSiO3 (0.19). FT-IR analysis showed that Ca-O bond was a dominant bond characteristic to determine Qf value of CaSiO3 than Si-O bond. Higher Qf value of β -CaSiO3 with lower degree of crystallinity than that of α -CaSiO3 could be explained by the higher Ca-O bond strength of β -CaSiO3 than that of α -CaSiO3. |
| 저자 |
Jin Seok Baek1, Eung Soo Kim2
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| 소속 |
1Department of Advanced Materials Engineering, 2Kyonggi Univ. |
| 키워드 |
β –CaSiO<SUB>3</SUB>; α -CaSiO<SUB>3</SUB>; microwave dielectric properties; structural characteristics
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| E-Mail |
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