| 학회 | 한국재료학회 |
| 학술대회 | 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 | 19권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Development of Non-Amine-based Cleaning Solution for Post-Cu CMP(Chemical Mechanical Planarization) Application |
| 초록 | Copper surfaces can become contaminated by slurry particles and organic residues during chemical mechanical planarization (CMP). Silica particles are widely used as abrasives, while benzotriazole (BTA) is widely used as corrosion inhibitor in copper CMP slurries. These materials contaminate the copper surface during CMP and need to be removed using an effective cleaning solution. The objectives of this work were to develop a non-amine-based alkaline cleaning solution and characterize the solution based on the benzotriazole (organic residue) removal and particle removal efficiency. Cesium hydroxide and potassium hydroxide were used as cleaning agents and ethylene glycol was used as a corrosion inhibitor. Ethylene glycol acts as a chelating agent as well in the cleaning composition. BTA removal was characterized using contact angle measurements, X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy (EIS) techniques. The corrosion protection ability of the cleaning solutions was quantified by potentiodynamic polarization studies. Both potassium hydroxide- and cesium hydroxide-based solutions exhibited high BTA and silica particle removal. When compared to a potassium hydroxide-based cleaning solution, cesium hydroxide-based cleaning solution was found to be more effective in terms of low surface roughness and low etch rate. |
| 저자 | Byoung-Jun cho1, Xiong Hailin2, Jin-Goo Park3 |
| 소속 | 1Department of Bio-Nano Technology, 2Hanyang Univ., 3Department of Materials Engineering |
| 키워드 | Post-Cu CMP; Cesium hydroxide; Non-amine cleaning solution; BTA |
