| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 반도체 재료 |
| 제목 | Development of slurry for Ru Chemical Mechanical Planarization |
| 초록 | In the DRAM technology, conventional capacitor has the semiconductor bottom electrode which is called MIS (metal insulator semiconductor) capacitor. However, conventional poly-Si bottom electrode cannot satisfy the requirement of electrical properties and compatibility to the high k materials. For this reason, MIM (metal insulator metal) capacitor has been investigated. Ru (ruthenium) has been suggested as new bottom electrode due to its excellent electrical performance, a low leakage of current and compatibility to the high dielectric constant materials. In this case of Ru bottom electrode, CMP (chemical mechanical planarization) process was needed in order to planarize and isolate the bottom electrode. In this study, the effect of chemical A on polishing and etching behavior was investigated as function of concentration, pressure and abrasive particle. |
| 저자 | In-Kwon Kim1, Tae-Young Kwon1, Jin-Goo Park1, Hyung-Soon Park2 |
| 소속 | 1Hanyang Uni., 2Hynix Semiconductor Inc. |
| 키워드 | Ruthenium; CMP; slurry |
