| 학회 | 한국재료학회 |
| 학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 | 22권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Effect of Mn3O4 Doping on Electrical Properties of ZnO-Zn2BiVO6 Ceramics |
| 초록 | 0.0 ~ 5.0 at% Co3O4-doped ZnO-Zn2BiVO6 ceramics were fabricated by a commercial ceramic process (sintered at 700 to 1200℃). The I-V characteristics of ZZMn samples sintered 900 ℃ to 1200 ℃ were measured. Mn3O4-doped ZnO-Zn2BiVO6 ceramics have exhibited a varistor behavior. Also we analyzed the cause of the varistor behavior. Doped-ZnO ceramics are widely applied to electronic devices using grain boundary effect. ZnO varistor is one of the semiconductor resistance device, manufactured by various chips and disks. These electronic ceramic devices are always used in parallel with circuit to protect device from electrostatic discharge (ESD), surge and lightning. These ceramics with the addition of small amounts of other metal oxides exhibit highly non-ohmic behavior in current-voltage characteristics. The electrical properties of ZnO varistor depend greatly on the dopants. The starting materials were used 99.9% of ZnO, Bi2O3, V2O5, and Mn3O4 powder. 0.0 ~ 5.0 at% Mn3O4-doped ZnO-Zn2BiVO6 ceramics were fabricated by a commercial ceramic sintering processes. The densification and grain growth of Mn3O4-doped ZnO-Zn2BiVO6 ceramics was influenced by Mn3O4 content. In this study, Mn3O4 doping effect on microstructure and electrical properties of ZnO-Zn2BiVO6 ceramics were investigated and exhibited a nonlinear behavior. As a result, it can be seen that the incorporation of Mn3O4 has a significant effect on nonlinear properties. The behavior can be related to the potential barrier depending on electronic states at the grain boundaries in accordance with the incorporation of Mn3O4. So, We try to analyze the cause of these results. |
| 저자 | You Bi KIM1, Seo Yeong Yeo2, Jong Hoo Paik3, Jeong Ho Cho4, Youn Woo Hong3 |
| 소속 | 1Department of Physics, 2YonSei Univ., 3Electronic Materials Component Center, 4Korea Institute of Ceramic Engineering & Technology |
| 키워드 | <P>ZnO; Varistor; Electrical Property; Mn<SUB>3</SUB>O<SUB>4</SUB></P> |
