| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Electrical and structural characterization of Ge doped Cu2ZnSn(S,Se)4 thin film based solar cells |
| 초록 |
It is well known that germanium (Ge) doping on a Cu2ZnSn(S,Se)4 (CZTSSe) film may improve the efficiency of its solar cell due to the increase of band gap of CZTSSe film. Here in this study, the Ge doping system is applied on a different process in comparison with other studies. The different process which may achieve 11.8% CZTSSe cell efficiency in our group is a soft-annealing system prior to selenization process for a formation of CZTSSe film. To observe effects of Ge doping on the CZTSSe solar cells fabricated by our system, thin Ge layers with 5, 10, 15 and 20 nm thickness are separately deposited on a surface of soft-annealed Mo/Zn/Sn/Cu precursor by sputtering. Afterwards, sulfo-selenization process is performed at 520 degree Celsius for 450 sec to make Ge doped CZTSSe film. CdS buffer layer and i-ZnO/AZO layers are sequentially deposited on the fabricated absorber layers by CBD and sputtering, respectively. The device characterization is performed by I-V and quantum efficiency measurement system, and a structural analysis for absorber layer is proceeded by Raman spectroscopy. Contrary to other general results, in our case, Voc is simultaneously reduced together with efficiency as the thickness of Ge layer is thicker. By examining of reasons for the reversed results from this study, here we suggest the effective way to dope Ge on a CZTSSe film. |
| 저자 |
Hyesun Yoo1, Jun Sung Jang2, Jin Hyeok Kim3
|
| 소속 |
1Optoelectronic Convergence Research Center, 2Department of Materials Science and Engineering, 3Chonnam National Univ. |
| 키워드 |
CZTS; CZTSSe; solar cell; Ge doping
|
| E-Mail |
|
