| 학회 | 한국재료학회 |
| 학술대회 | 2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 | 18권 1호 |
| 발표분야 | C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 | Effect of Different Selenium Annealing Temperature on the Green Synthetic Route CBD-ZnS Thin Films |
| 초록 | ABSTRACT: This study showed the effect of various Se annealing temperature on the CBD-ZnS thin films prepared by the use of non-toxic complexing agent tri-sodium citrate (Na3-citrate) on the glass substrate. Effect different Se annealing temperature from 100 to 500 °C on the morphological, structural and optical properties of ZnS thin films investigated. Field emission scanning electron microscopy (FE-SEM) studies on the ZnSSe thin films showed that films were uniform, pin hole free, well adhered to the glass substrate and film showed more uniform nature when annealed at 500 °C annealed. Atomic Force Microscopy (AFM) study showed that ZnSSe films prepared at 500 °C had low RMS value. X-ray diffraction (XRD) study on ZnSSe composite thin films showed that films were amorphous in nature except the films prepared at 400 and 500 °C which showed mixed cubic and hexagonal ZnS phase. Ultraviolet- visible (UV-vis) spectroscopy study showed all ZnSSe thin films were highly transparent showing about 80 % transmission in the visible region. Band gap energy of ZnSSe thin films decreased from 3.19 to 2.90 eV as the annealing temperature increased from 100 to 500 °C. The band gap energy of the ZnSSe thin films falls between the band gap energy of ZnS (3.73 eV) and ZnSe thin films (2.7 eV). Keywords: Se annealing temperature, Non- toxic complexing agent, ZnSSe thin films, Green synthetic route, Buffer layer. |
| 저자 | G. L. Agawanea1, Seung Wook Shin2, K. V. Gurav1, A. V. Moholkar3, Jeong Yong Lee1, Jin Hyeok Kim2 |
| 소속 | 1Department of Materials Science and Engineering, 2Chonnam National Univ., 3KAIST |
| 키워드 | Se annealing temperature; Non- toxic complexing agent; ZnSSe thin films; Green synthetic route; Buffer layer |
