| 학회 |
한국재료학회 |
| 학술대회 |
2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 |
20권 2호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Growth Mechanism of Multi-layer Graphene at Low-temperature by Plasma Enhanced Chemical Vapor Deposition |
| 초록 |
Graphene has received a lot of attention in many applications due to its unique properties. Especially, multi-layer graphene has been considered as a replacement of copper wiring on LSI (large-scale integration). Synthesis techniques for high-quality and large-scale graphene at low-temperature are required to apply for LSI semiconductor area. PECVD (plasma enhanced chemical vapor deposition) is one of the most expected methods for the aim. Compared with thermal CVD graphene, the relatively lower quality of PECVD graphene is main drawback. In order to suggest ways for the problem, we studied growth mechanism of multi-layer graphene on nickel by PECVD at 400℃. This study could be used widely to optimize graphene growth conditions for many applications. |
| 저자 |
Kayoung Yun1, Dasol Cheang1, Jiyeon Hyun1, Aeran Roh1, Sun Heo1, Lanxia Cheng2, Jiyoung Kim2, Jae-Yong Lee1, Pil-Ryung Cha1, Ho-Seok Nam1
|
| 소속 |
1Kookmin Univ., 2Univ. of Texas at Dallas |
| 키워드 |
Graphene; PECVD; Low-temperature; Growth mechanism
|
| E-Mail |
|
