| 학회 | 한국재료학회 |
| 학술대회 | 2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 | 18권 1호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Dependence of Electrical Bistability on LiF Thickness for Polymer Memory-cell |
| 초록 | We researched the interfacial issue between electrode and polymer layer on nonvolatile memory-cell. It is a well-known fact that the current density of the organic devices can be affected by charge injection property between electrode and polymer interface. In approaching the issue, we used the LiF layer to improve the charge injection property of polymer nonvolatile memory cell. We fabricated the polymer nonvolatile memory cells which have structure of LiF / P3HT(3-hexylthiophene) embedded with Au nanocrystals / LiF between top and bottom Al electrodes. Electrodes and LiF layer were deposited by thermal evaporator and the polymer layer embedded with Au nanocrystals was formed by spin-coating process. To evaluate the effect of LiF layer, we measured the electrical characteristics such as memory margin, retention time, endurance cycles with modulating the LiF thickness. We found that the LiF layer improved electrical property of polymer nonvolatile memory cell. In particular, the memory cell showed the best electrical characteristics such as memory margin of 3x102, retention time for 105sec and about 190 endurance cycles of program and erase when bottom and top LiF thickness were 1 nm. Additionally, the polymer memory cell showed good thermal stability. The electrical characteristics of polymer memory cells were sustained at 85oC. *Acknowledgement This work was supported by R&D Program of the Ministry of Knowledge Economy and the Brain Korea 21 Project in 2012. |
| 저자 | Dong Hyun Park1, Jong Dae Lee2, Hyun Min Seung1, Kyoung Cheol Kwon2, Jong Sun Lee1, Dong Hyun Yang2, Myung Jin Song1, Jea Gun Park2 |
| 소속 | 1Advanced Semiconductor Material& Device Development Center, 2Hanyang Univ. |
| 키워드 | P3HT(3-hexylthiophene); LiF(lithium fluoride); polymer memory |
