| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
38권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Bandgap Control of Bilayer Graphene Using Self-assembled Monolayer and Graphene Oxide |
| 초록 |
Bandgap engineering of graphene is a big hurdle for the electronic application. Graphene has a zero bandgap in which the conduction band and valance band meet at one point. In order to open the bandgap in graphene, applying electrical bias on bilayer graphene is one of the promising methods. Here, we have fabricated bilayer graphene field-effect transistors (BGFETs) with all-solution processes using graphene oxide (GO) as p-dopant and self-assembled monolayer as n-dopant to engineer the bandgap of bilayer graphene. Langmuir-Blodgett (LB) technique has been used to control the deposition density of GO on the bilayer graphene as well as on monolayer graphene. Raman spectroscopy has been utilized to characterize the features of monolayer and bilayer graphene and GO. Our results demonstrate a facile and efficient solution-process approach to selectively control the bandgap of bilayer graphene. |
| 저자 |
이은광, 박철희, 오준학
|
| 소속 |
울산과학기술대 |
| 키워드 |
Bilayer graphene; Bandgap; Transistor; Graphene oxide; p-dopant; Langmuir-Blodgett
|
| E-Mail |
|
