| 학회 | 한국재료학회 |
| 학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 | 22권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | 수소 이온 도핑을 이용한 비정질 IGZO의 저항 변화 특성 향상 |
| 초록 | Resistive random access memory (ReRAM) is considered promising for next-generation nonvolatile memory (NVM) applications because of its simple device structure, high speed operation, high density and low power consumption. However, there are some issues, such as variations in as operation voltage and stability of the resistive switching characteristics, which preclude its use in new memory applications. Its characteristics are related to off-stoichiometric oxygen controlling and annealing conditions. Among several resistive switching materials including binary/ternary metal oxide and metal nitride, an amorphous indium-gallium-zinc-oxide (a-IGZO) has off-stoichiometric oxygen in the form of deficient and excessive oxygen sites, we can improve the film properties by introducing hydrogen atoms through the annealing process. In this work, bipolar resistive switching properties of W/a-IGZO/Pt structure ReRAM cell was improved by hydrogen post annealing process. The a-IGZO film is prepared by a radio frequency magnetron sputtering system at room temperature in an ambient of argon (Ar) and oxygen (O2). Compared to the as-deposited sample, the variations in set and reset voltage of the W/IGZP/Pt sample annealed at hydrogen and argon mixture gas, are dramatically reduced to 0.31V from 0.85V. In addition, the current ratio between high resistance state (HRS) and low resistance state (LRS) is larger than conventional thin films from 0.07×102 to 2.2×102. The device also exhibits a good endurance (＞106 cycles) and retention stability (＞105 s). Finally, the effect of hydrogen post-annealing is also investigated by analyzing the sample surface using x-ray photon spectroscopy and atomic force microscopy. This treatment approach offers a useful fabrication to enhance the switching properties for next-generation memory applications. |
| 저자 | 강대윤, 이태호, 박주현, 전동수, 김명주, 박태훈, 이병룡, 김태근 |
| 소속 | 고려대 |
| 키워드 | <P>비정질산화물반도체; 저항변화메모리; 수소 이온 도핑</P> |
