| 학회 |
한국재료학회 |
| 학술대회 |
2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 |
22권 2호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Electrical and Optical Properties of MoS2 Device with All-trans-retinal |
| 초록 |
This research compares the properties of pristine MoS2 field effect transisfor (FET) and all-trans-retinal coated MoS2 FET. Our retinal-MoS2 FET had highly increased output electric current rather than pristine MoS2 FET in dark and bright condition. We illuminated different wavelength of light to retinal-MoS2 combined device and we was able to observe that our all-trans-retinal treated device showed different characteristic compared to MoS2 only device. We also did photocurrent mapping to show that our device performance is originated from MoS2-retinal treated region. Finally, electric current variation depending on the status of light which is turned on-off periodically is observed that current is increased about 102 in both on and off condition. |
| 저자 |
Joo Nam Kim1, Woo Jong Yu2
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| 소속 |
1Department of Electronic and Electrical Engineering, 2Sungkyunkwan Univ. |
| 키워드 |
MoS<SUB>2</SUB>; All-trans-retinal; light sensor; TMDs
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| E-Mail |
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