| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Flexible and Transparent AgNW/SiNM Schottky barrier diodes for light sensors by using solution process |
| 초록 | Ag nanowire (NW)/Si nanomembrane (NM) Schottky barrier diodes (SBD) were fabricated by using transfer-printing method which creates pedestals made of PR, using only one photomask. The transfer using the pedestals afforded a yield of ＞95% with no significant cracks. In addition, it doesn’t need high vacuum due to using solution process. The transferred 100nm SiNM inherit characteristics of bulk single-crystal Si such as optical absorption at cutoff wavelength (1100nm), even has both semi-transparency and extreme flexibility. Also, after transferred on a polymer substrate, it remains an average transmittance of 72% in visible range (400~750nm). The SBD, having a schottky barrier formed by SiNM and AgNW, shows common performance of SBD such as high speed and low-noise performance, simultaneously remaining the high transparency and flexibility. This AgNW/SiNM SBD has light on-off characteristics and, when measuring current with variation of light intensity from 10% to 100%, shows 2 times difference between 10% and 100%. Additionally, mechanical bending characteristics were observed with radius of curvature from 80mm to 20mm. As the results, we expect that this SBD, having good flexibility, can be served as multifunction devices such as SBD-based high Hz detector, flex sensor and photo-detector in flexible and transparent electronics. |
| 저자 | Younghyun Hwang1, Kwangwook Choi2, Byung-Kwon Ju1 |
| 소속 | 1Display and Nanosystem Lab., 2Korea Univ. |
| 키워드 | Flexible; Transparent; AgNW; Schottky diode; Light sensor; Solution process |
