| 학회 | 한국재료학회 |
| 학술대회 | 2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 | 17권 1호 |
| 발표분야 | C. Energy and the Environment Technology(에너지 및 환경재료) |
| 제목 | Effects of Firing Temperature Conditions on the Crystalline-Si Solar Cells |
| 초록 | A firing process is a very important in the manufacturing of crystalline Si solar cell because it firmly affects power conversion efficiency (PCE), such as Voc, Jsc, FF and efficiency. In this research, we studied how to improve the PCE in according with effect of firing temperature conditions by using a rapid thermal process (RTP) system. The Cz Si had a resistivity of 1~3 Ω∙cm and a thickness of 200 μm. After the initial etching and cleaning, wafers diffused in a POCl3 furnace to obtain a doping layer and an emitter sheet resistance of 58 Ω/□. A SiNx with a thickness of 80nm was deposited by using a low-frequency PECVD. Then, the Al paste (Ferro FX 53-112) and Ag paste (NS 33-501) were screen-printed on the back and front, respectively. After screen printing, the samples fired in a RTP system with a various peak temperatures. The peak temperatures were 660, 670, 680, 690 and 700 oC with delay time of 2, 5 and 10 s, respectively. It was founded that the best firing peak temperature was 680 oC with a delay time of 2 s. In addition, the efficiency of solar cells fired at the peak temperature was 15.8%. In conclusion, we present the characteristic result on aluminum back surface field (Al-BSF) and p-n junction leakage on the silver front grid with a various firing temperature conditions. *This work is supported by Energy R&D program (20093021010010) under the Korea Ministry of Knowledge Economy (MKE) and the Brain Korea 21 Project in 2011. |
| 저자 | Hyun-Ki Yoon1, Seung-Wook Baek2, Min-Ha Choi1, In-Ji Lee2, Gon-Sub Lee1, Jea-Gun Park2 |
| 소속 | 1Advanced Semiconductor Material and Device Development Center, 2Hanyang Univ. |
| 키워드 | Silicon solar cell; RTP; Firing |
