| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 봄 (04/09 ~ 04/10, 대전컨벤션센터) |
| 권호 |
34권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Memory Device Architectures with Varying Insulating Layers Based on P(VDF/TrFE)(72/28) Copolymer Thin Films |
| 초록 |
The copolymers of vinylidene fluoride and trifluoroethylene (PVDF/TrFE) have been widely studied for use in non-volatile ferroelectric polymer memory devices for the last decade. In this study, PVDF/TrFE (72/28) used as ferroelectric insulator in varying memory device architectures such as metal-ferroelectric polymer-insulator-semiconductor (MFIS) were examined using capacitance measurements under the bias electric field. Compared to the simplest MFM memory device where destructive data reading is inevitable to distinguish ‘0’ and ‘1’ states, MIFS device architecture was found to be more suitable for non-volatile memory due to possible non-destructive reading of ‘0’ and ‘1’ states through capacitance measurement. The results are reported in detail here. Acknowledgement : The authors would like to thank the Korea Science and Engineering Foundation (KOSEF) for sponsoring this research through the SRC/ERC Program of MOST/KOSEF. |
| 저자 |
김유민, 윤선, RAMASUNDARAM, 김갑진
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| 소속 |
경희대 |
| 키워드 |
Poly(vinylidene fluoride-trifluoroethylene); Thin Films
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| E-Mail |
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