| 초록 |
The frictionally rubbing method of PTFE was applied in order to induce epitaxially oriented ferroelectric film which was spin coated on rubbed Teflon film. The existence of micron size topographic ledges and molecular structure of PTFE chains play a key role in the orientation of ferroelectric thin polymer films, confirmed by Transmission Electron Microscopy (TEM). The bcPVDF-TrFE plane is in contact with the acPTFE plane with the epitaxial relation of bPVDF-TrFE//aPTFE, and consequently global orientation of edge-on PVDF-TrFE lamellae was observed. With this architecture, we fabricated the nonvolatile MFM and MFIS devices with the structure of Al/PVDF-TrFE/PTFE/pSi and Al/PVDF-TrFE/PTFE/p-type Si, respectively. The remanent polarization of 4.99μC/cm2 was obtained in MFM capacitors and the memory window of 2.4V in capacitance-voltage hysteresis was achieved in MFIS structures. |
