| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | A. 전자/반도체 재료 |
| 제목 | Low temperature photoluminescence of MOCVD grown InSb epilayers |
| 초록 | We report the optical properties of InSb epilayers grown on InSb (001) substrates using low pressure metal-organic chemical vapor deposition. The V/III ratio, ranging from 2.2 to 13.2 in this investigation, was found to have a significant impact on PL characteristics of the InSb layers. At V/III of 8.8, the InSb layer showed the best optical quality of the band edge emission at 236 meV with FWHM of 3.2 meV. On the other hand, at other V/III ratio, the PL peak was observed to shift to lower energy with the FWHM increasing. Both Raman and Hall measurements suggested that during the growth indium interstitials, charged impurities of donor type, were incorporated into the InSb layers without inducing residual strains. This caused a potential fluctuation of the band edge forming the band tails, resulting in the decrease of the band edge emission energy. A new PL peak was observed at 175 meV. The intensity of the peak was found to be strongly dependent on the InSb growth temperature, but independent of V/III ratio. In addition, carbon concentration in the InSb epilayer was dominantly influenced by the decomposition of trimethylantimony in the investigated growth temperature range from 450 to 510 oC. The strong relationship between the InSb growth temperature and the carbon concentration in the InSb epilayers suggested that carbon could be responsible for the new PL emission. More detailed experimental results for the effect of growth conditions on the optical properties of the InSb epilayers will be addressed in the presentation. |
| 저자 | 윤의준1, 박용조2, 오은순3, 송진동4, 최원준5, 김상혁6, 박환열6, 박세훈6 |
| 소속 | 1서울대, 2재료공학부, 3차세대융합기술원, 4충남대, 5물리학과, 6KIST |
| 키워드 | <P>InSb; PL; MOCVD</P> |
