| 초록 |
We controlled the composition of CIGS thin films through annealing process. CIGS thin films were prepared by MOCVD method using organometallic precursors. In the heat treatment process, inert N2 gas was filled in the chamber and the temperature was set to 500°C, 550°C and 600°C, respectively. The sample was annealed for 30 minutes and analyzed using X-ray diffraction and Auger electron spectroscopy. The sample was phase-separated, but only one phase was observed in the heat-treated thin film over 550°C. In addition, after heat treatment at 550°C, significant Ga/(Ga+In) ratio changes were observed. When the content of elements was observed along the depth, the concentration of Ga and In became homogeneous. The mutual diffusion of CuGaSe2 and CuInSe2 affected the homogenization process |
