| 학회 |
한국재료학회 |
| 학술대회 |
2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 |
26권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Physical properties of Sb2S3 and SnS semiconducting compounds thin films |
| 초록 |
Sb2S3 and SnS are promising materials for light absorption (photoactive layer) due to its high absorption coefficient of visible light, relatively abundant resources, non-toxicity and above all, their simple composition in a two-component system. In this study, the solution process was adopted to fabricate Sb2S3 and SnS films, which will be applied to the large-area thin-film solar cell in the future. Sb, Sn, and S precursors were mixed with polymer binders and spin coated on FTO glass with different spin speed and holding time. And then the films were heat treated in inert atmosphere with various heat treating schedule to find optimized condition. XRD, Raman, SEM, and Nanoindentation were used to characterize the thin films’ physical properties which guided us to determine the optimum condition for the films. |
| 저자 |
Mao Zhang1, Dayoung Yoo2, Chiho Kim1, Yangdo Kim2, Dongyun Lee3
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| 소속 |
1Dept. of Nano Fusion Technology, 2Pusan National Univ., 3School of Materials Science and Engineering |
| 키워드 |
Binary semiconduting compound; thin film; spin coating
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| E-Mail |
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