학회 |
한국재료학회 |
학술대회 |
2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
권호 |
27권 2호 |
발표분야 |
C. 에너지 재료 분과 |
제목 |
Ni-doping effects on physical properties of spin-coated Sb2S3, SnS and Sb2Se3 semiconducting compound thin films |
초록 |
Sb2S3, SnS and Sb2Se3 semiconductor compounds was prepared as thin films on an FTO glass substrate by spin coating. To improve physical properties of these spin-coated thin films, we doped Ni with chlorine-based solution. The heat treatment was performed for crystallization on a hot plate in Ar filled glove-box. The crystal structures, surface morphologies and component compositions of this thin films were analyzed. In addition, photocurrent was measured to observe changes in optical properties of thin films according to Ni doping. The XRD analysis shows that the Ni-doped Sb2S3 thin film has a decreased intensity of [020] orientation, which aids carrier transport. Therefore, the electrical properties of Sb2S3 with Ni doping are improved compared to Sb2S3 without Ni doping. However, Ni doping has little effect on the crystal morphology of SnS and Sb2Se3, which can also reduce the photocurrent of these two thin films. We will present these phenomena in more detail. |
저자 |
Mao Zhang1, Dongyun Lee2, Dayoung Yoo3, Yeojin Kang2, Wonjung Park1
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소속 |
1Department of Nano Fusion Technology, 2Pusan National Univ., 3Department of Nanoenergy Engineering |
키워드 |
Sol-Gel; Semiconductor thin film
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E-Mail |
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