| 초록 |
Nano-wire (NW) field-effect transistor (FET) has been expected to be a promising device structure in semiconductor industry due to its scalability and enhanced gate-controllability. Especially, III-V compound semiconductor based NW FETs enable to lower the power consumption, because of their high mobility. In this research, novel charge injection memory (CIM) device will be presented using intrinsic InAs NW with high electron mobility. Simple combination of InAs native oxide and SiO2 stack accommodates the charge trapping sites to store a bit information, resulting in more than 15V of the memory window. This charge-trapping behavior of the InAs NW FET is confirmed for more than 1000 seconds and followed by the investigation of its dynamic properties. The disclosure of the charge-trapping effect in the InAs CIM will provide a glimpse of the simplified non-volatile memory devices based on the III-V NWs. |
