| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | 2. 2차원 반도체 합성 및 소자 응용(Synthesis and device applications of two-dimensional semiconductors) |
| 제목 | 2D materials for reducing contact resistivity of metal-semiconductor junction |
| 초록 | As the channel resistance of transistor shrinks with continued scale down of complementary metal-oxide-semiconductor technology nodes, lowering external parasitic resistance, especially the contact resistance (Rc), becomes a critical area of focus. One of the main causes of high contact resistance is the Schottky barrier at the metal-semiconductor junction in source and drain. The current approach to lower contact resistance is to reduce “barrier width” and thus increase the tunneling current by using heavily doped semiconductors. However, this method is approaching its limitation because of the solid solubility limit of charged dopants in Si, high leakage current, and dopant profile control. Here we propose a new method to reduce the contact resistance at the metal/semiconductor interface with the insertion of 2D materials, such as graphene and hexagonal-boron nitride (h-BN) and transition metal dichalcogenides. In this approach, 2D layers improve the metal/semiconductor contact by modifying the work function of contact metal and thus reducing Schottky barrier height. With the insertion of 2D materials, we achieved Schottky barrier height of less than 0.1 eV and contact resistivity of few nΩ·cm2. This proposed 2D inserted technique can be used as sub- nΩ·cm2 contacts for metal/n-Si and low Rc contact with new semiconductor materials beyond Si CMOS technology. |
| 저자 | 남승걸, 이민현, 조연주, 신건욱, 김창현, 신현진, 박성준 |
| 소속 | 삼성전자 종합기술원 |
| 키워드 | Fermi level pinning; Schottky barrier; Contact resistance; Graphene; h-BN; TMD; Silicon. |
