| 학회 |
한국재료학회 |
| 학술대회 |
2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 |
24권 2호 |
| 발표분야 |
H. 한-일 재료공학(KJMST 2018) |
| 제목 |
Air Tunnel Fabrication in GaN/Sapphire for Chemical Lift-off |
| 초록 |
In this study, we introduce the process of manufacturing an air tunnel in order to improve the efficiency of chemical lift-off. In the chemical stripping method, the sacrificial layer is inserted into the interface between the substrate and the film, and the substrate and the film can be peeled off by removing the sacrificial layer. When the etching solution for removing the sacrificial layer is transported using the inner air tunnel, the effect of the peeling time reduction can be expected. We performed the following process to fabricate the air tunnel structure. A sapphire substrate with a mesa shape pattern is fabricated. PR is coated on the substrate with the same mesa pattern height and the sacrificial layer is deposited. Then, PR is removed to make the sacrificial layer floated on the sapphire mesa pattern. A GaN film was grown on the fabricated structure by MOCVD. Through our air tunnel manufacturing process, we were able to manufacture a tunnel with a height of 1.2 μm and a width of 0.55 to 2 μm. We also report on the characterization of GaN films grown on air tunnel structures. This work was supported by the Technology Innovation Program (10067492) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).
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| 저자 |
Woo Seop Jeong, Hyun-A Ko, Seunghee Cho, Min Joo Ahn, Doo Won Lee, Kyu-Yeon Shim, Seong Ho Kang, Dongjin Byun
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| 소속 |
Korea Univ. |
| 키워드 |
<P>GaN; Air; Tunnel; CLO</P>
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| E-Mail |
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