학회 | 한국재료학회 |
학술대회 | 2011년 가을 (10/27 ~ 10/29, 신라대학교) |
권호 | 17권 2호 |
발표분야 | C. Energy and the Environment Technology(에너지 및 환경재료) |
제목 | Enhancement of Solar Cell Efficiency the N-type Al Rear Junction by Optimizing Doping Temperature |
초록 | The n-type silicon has an enormous potential for many applications in the solar cell industry. Its relative tolerance to common impurities potentially results in higher minority carrier diffusion lengths compared to p-type silicon substrates. The new silicon solar cell structure is presented in which the p-n junction is located at the back side of the cell is formed by alloying aluminum with n-type silicon. The n-type Cz Si had a resistivity of 349 Ω/□ and a thickness of 175 μm. After the initial etching and cleaning, wafers were diffused in a POCl3 furnace to form a front surface field (FSF) layer. Anti-reflection coating layer was deposited by using a low-frequency PECVD and it thickness was 80nm. Then, second etching was performed by KOH solution to remove the n+ layer at the back side of the cell and then, the Al and Ag paste were screen-printed on the back and front, respectively. After the metallization, the samples co-fired and formed p+ emitter layer in a RTP system. We investigated the formation of FSF layer of the n-type Al rear junction solar cell by varying doping temperature via simulation and experiment. The doping temperature was increased by 50 from 800 to 1050 °C. The result shows that power conversion efficiency (PCE) increased ~5% at 800°C compared to that of 1050°C of doping temperature. It was found that enhancement was caused by the formation of shallow FSF layer at the condition of low temperature. * This work was supported by IC Design Education Center (IDEC), energy R&D program (20093021010010) under the Korea Ministry of Knowledge Economy (MKE) and the Brain Korea 21 Project in 2011. |
저자 | Min-Ha CHOI1, Seung-Wook BAEK2, Hyun-Ki YOON1, In-Ji LEE2, Gon-Sub LEE1, Jea-Gun PARK2 |
소속 | 1Advanced Semiconductor Materials and Device Development Center, 2Hanyang Univ. |
키워드 | solar cell; n-type; rear junction |