| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Fabrication of Ge alloyed Cu2SnS3 (CTGS) Thin Film Solar Cells: Influence of Annealing Temperatures |
| 초록 |
Ge alloyed Cu2SnS3 (CTGS) thin films were prepared by annealing the sputtered deposited Cu-Ge-Sn precursor films under sulfur atmosphere at different annealing temperatures. The influence of different annealing temperatures on morphological, compositional, crystal structure of CTGS thin films were investigated. It was found that the annealing temperature of 550°C provides a favorable sulfurization environment to promote grain growth leading to a compact thin film formation. Improved performance is ascribed to high Ge contents as evidenced from X-ray fluorescence (XRF) studies. Well incorporated Ge atoms into CTS thin film can be confirmed by X-ray diffraction (XRD). X-ray photoelectron spectroscopy (XPS) study provides an evidence of existent of Ge atoms where its binding energy located at 25.78 and 26.78 eV, respectively. However, the decreased performance can found at unsuitable annealing temperatures such as 500 °C, 520 °C, 580 °C and 600 °C. Finally, with annealing temperatures of 550 °C, the best power conversion efficiency (PCE) of 2.14% was acquired with an open circuit voltage (Voc) of 220 mV, a short circuit current density (Jsc) of 23.74 mA/cm2 and a fill factor (FF) of 41%. |
| 저자 |
Mingrui He1, In Young Kim2, Jin Hyeok Kim3
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| 소속 |
1Optoelectronics Convergence Research Center, 2Department of Materials Science and Engineering, 3Chonnam National Univ. |
| 키워드 |
Thin film solar cells; Cu2(Sn; Ge)S3; Cu2SnS3; Ge alloying; annealing temperature dependence; sputtering
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| E-Mail |
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