| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
F. 광기능/디스플레이 재료(Optical Functional and Display Materials) |
| 제목 |
The effects of Li addition on the performance of Zinc oxide thin film transistor by mist chemical vapor deposition |
| 초록 |
The mist chemical vapor deposition (mist-CVD) process can be used for the deposition of doped ZnO films as well as for the fabrication of high-performance TFTs onto substrates under an ambient atmosphere with a low processing temperature (~250℃). An undoped ZnO precursor solution with a concentration of 0.015 M was prepared by directly dissolving zinc acetate dehydrate in methanol. Li-doped ZnO precursor solutions were prepared by adding lithium nitrate to the ZnO precursor solution with Li doping concentrations of 10, 20, and 30 mol% in relation to the (Zn+Li) content in the mixed solution. Li doping significantly increases the field-effect mobility in TFTs up to ~100 times greater than that of undoped ZnO. Physical and chemical structure analyses confirmed that the Li doping resulted in reduced oxygen vacancies as well as improvement in the crystallinity of the mist-CVD-grown ZnO films. The addition of Li into mist-CVD-grown ZnO semiconductors leads to improved film quality, which results from the enhanced crystallinity and reduced defect states, including oxygen vacancies. Our results suggest that Li doping of ZnO-based oxide semiconductors could serve as an effective strategy for high-performance, mist-CVD-processed oxide TFTs with low-cost and low-temperature fabrication. |
| 저자 |
전혜지, 배재윤, 박진성
|
| 소속 |
한양대 |
| 키워드 |
Mist-Chemical Vapor Deposition; Oxide Semiconductor; Thin film transistor
|
| E-Mail |
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