| 초록 |
We have fabricated flexible Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells (TFSCs) with Zn(O,S) buffer layer. Generally, CdS buffer layer has been used to fabricate high efficiency CZTSSe solar cell. However, the band gap of CdS is 2.42 eV and CdS is toxic materials. Among alternative buffer layers, the Zn(O,S) buffer layer has become more successful [1] to realize high efficiency CZTSSe solar cell. In thin work, we have studied the effect of Zn(O,S) buffer layer on CZTSSe TFSCs depositd on molybdenum (Mo) foil substrate. The formation of CZTSSe absorber layers was carried out by annealing process of the sputter deposited precursors in sulfur-selenium atmosphere using custom-built rapid thermal annealing (RTA) system. And then, Zn(O,S) buffer layers were deposited using atomic layer deposition (ALD) method. Furthermore, we also studied the effect of Zn(O,S) buffer layers thickness. Zn(O,S) thin film were investigated using X-ray diffraction (XRD), Field-emission scanning electron microscope (FE-SEM), and High-resolution transmission electron microscope (HR-TEM). And the characteristics of flexible CZTSSe TFSCs were investigated using Quantum efficiency, and J-V curves. Further detailed analysis and study of the properties of flexible CZTSSe TFSCs with Zn(O,S) buffer layer will be discussed. References: [1] T. Nakada, M. Mizutani, Jpn. J. Appl. Phys. 41 (Part 2 2B) (2002) 165-167 |
