| 초록 |
A thin-film NIR-selective organic photodiode (OPD) is realized by rational designing of the optical penetration region and depletion region. P-complexes consisting of two p-type polymers are used as active donor layers with [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) acceptor layer to form well-defined abrupt PN junction. The suggested device architecture is to realize efficient quenching of visible photons without reaching depletion region, while allowing photocurrent generation from NIR photons at the depletion region. This mechanism enables the first demonstration of NIR-selective OPDs with high peak detectivity over 1012 Jones at 705 nm or 780 nm, depending on p-complex, while maintaining thin active layer thickness (＜800 nm). |
