| 초록 |
Non-volatile ferroelectric polymer random access memory devices based on ferroelectric polymer have attracted in research mainly on the based on P(VDF-TrFE) copolymer because of the existence of ferroelectric polar β-crystalline phase at ambient temperature regardless of sample preparation methods. Some other aspects such as high cost, low thermal stability, and less net polarization are imposing the potential limitations on the applications to NV-FePORAM devices. As a result, PVDF is still remaining alternate potential ferroelectric polymer. We have successfully prepared β-phase by doping silver nanoparticles in PVDF. Therefore, in this work we will show the way of fabrication for controlling chain and dipole orientations in silver nanoparticle doped PVDF thin films and the associated properties which are especially utilitarian for NV-FePoRAM devices will be discussed. Acknowledgement : This work was supported by a grant from the Kyung Hee University in 2009 (KHU-20100153). |
