| 학회 | 한국재료학회 |
| 학술대회 | 2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 | 17권 1호 |
| 발표분야 | C. Energy and the Environment Technology(에너지 및 환경재료) |
| 제목 | Characterization of CIGS thin films fabricated by external Na doping with various substrate temperatures |
| 초록 | The Cu(In,Ga)Se2 thin film solar cells are the one of the most promising candidate for future renewable energy resources. The chalcopyrite CIGS solar cells have demonstrated a record conversion efficiency of 20.3%, which was obtained with SLG substrates by well-known 3-stage co-evaporation process. It has been shown that the diffusion of sodium from SLG during growth of the CIGS absorber layer at a high temperature (~550℃) is beneficial for the device performance. It was found that Na decreases resistivity and increases the open-circuit voltage due to increased p-type concentration. Therefore, in order to use variable substrates without Na and fabricate CIGS films in low temperature process, it is necessary to use external Na doping. So we used Na2S precursors which are deposited on a Mo coated substrate just before the CIGS deposition. And we also observed how substrate temperature had an effect on CIGS properties. The structure properties were analyzed by SEM, XRD and Raman spectrum. And defect level in CIGS films was shown by photoluminescence. And the electrical properties of CIGS solar cells were also observed by I-V and Q.E data. |
| 저자 | Young Min Shin1, Hae Na Ra Shin2, Chang Soo Lee1, Byung Tae Ahn1 |
| 소속 | 1KAIST, 2Hyundai Heavy Industries |
| 키워드 | CIGS thin films; 3-stage co-evaporation; external Na doping; Na2S; low temperature process |
