| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
대학원생 구두발표 (영어발표, 발표15분) |
| 제목 |
Reducing Line Edge Roughness of PS-b-PMMA pattern using hydrogen bonding located at the interface of the microdomains |
| 초록 |
Sharp interface between two blocks in block copolymer nano pattern is one of the important issues in industrial applications to nano-patterning. We utilized hydrogen bonding between N-(4-aminomethyl-benzyl)-4-hydroxymethyl-bezamide (BA) and urea (U) at the interface of polystyrene-block-poly(methyl methacrylate) copolymer. For this purpose, we first synthesized PS by ATRP, then the end group was converted to amino group. Next, it was reacted with BA, followed by reaction with 4-pentynoic acid, resulting in alkyne-terminated group (PS-U-BA-alkyne). Also, azide-terminated PMMA was prepared by anionic polymerization followed by end functionalization. Finally, by the click reaction between PS-U-BA-alkyne and PMMA-azide, PS-U-BA-PMMA was synthesized. We prepared vertical oriented lamellar nanopatterns on pre-patterned wafers and investigated line edge roughness (LER) after removing PMMA block by dry etching. We found that LER was reduced compared with PS-b-PMMA without hydrogen bonding. |
| 저자 |
이규성, 장상신, 박지철, 이재용, 황희동, 김진곤
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| 소속 |
포항공과대 |
| 키워드 |
Block copolymer; Hydrogen Bonding; Line Edge Roughness
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| E-Mail |
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