| 초록 |
Recently, a great deal of attention has been placed on atomic layer etching (ALE) processes as semiconductor features continue to shrink below 10 nm. ALE is a technique for removing a few monolayers of material using sequential reaction steps that are self-limiting. Especially, a cyclic plasma-enhanced fluorocarbon ALE process has attracted much interest for its selective etching and atomic-level control. A cyclic fluorocarbon ALE process using conventional plasma etching has attracted much attention interest. But it requires more feasibility studies for wide applications on various 3D nanoscale patterns. To address this issue, we’ve developed 3D topography simulations which consists of 3D-levelset-based moving algorithm, 3D ballistic transport of chemical species coupled with zero-D bulk plasma simulation. In this work, we developed a realistic plasma surface reaction model to apply the 3D ALD profile simulation. This work can lead to a better understanding of the cyclic fluorocarbon ALE process and its application to next-generation sub-10 nm devices. |
