| 학회 | 한국재료학회 |
| 학술대회 | 2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 | 24권 1호 |
| 발표분야 | E. 환경/센서 재료 분과 |
| 제목 | Superior chemical sensing property of Nb-doped MoSe2 2D-layered nanomaterials |
| 초록 | Molecule scale sensing ability of transition metal dichalcogenides materials (TMDs: MX2, M =W, Mo, X = S, Se, Te) can be ultimately realized because of their extremely sensitive surface and semiconducting properties. Even if there are many researches about the gas sensing properties, implementation of highly sensitive and stable gas sensing performance is not easy rare using the 2D-TMD materials, causing the bottleneck of the practical 2D chemical sensing applications. In this presentation, we demonstrated high performances Nb-doped MoSe2(MoxNb1-xSe2) gas sensing properties occurred by using combination process of a chemical vapor deposition and plasma enhanced atomic layer deposition methods. Concentration of Nb dopant atoms within MoSe2 matrix is critical factor to enhance chemical sensing properties on MoSe2. Response of gas sensing could be improved by optimizing Nb doping concentration. We also found that slightly Nb-doped MoSe2 layer has the better responsiveness rather than that of the bare MoSe2. Furthermore, oxidation of the MoSe2 could be hindered by Nb atoms for a long time. Consequently, enhancement in gas response and long-term gas sensing stability is possible for the optimal Nb-doped MoSe2 layers. This research would make a road toward realization of practical 2D-TMD gas sensing electronics. Furthermore, the concept would be applicable method for other semiconducting 2D-TMD layered materials. [1] [1] Choi et al., ACS Appl. Mater. Interfaces 2017, 9 (4), 3817 |
| 저자 | Seyoung Oh, Byungjin Cho |
| 소속 | Chungbuk National Univ. |
| 키워드 | <P>2D layered nanomaterials; Nb-doped MoSe<SUB>2</SUB>; Chemical sensor</P> |
