| 초록 |
In this talk, I will present synthesis methods of large area 2-dimensional materials. For the synthesis of large area and uniform thin films of MoS2, we used chemical vapor deposition with a gas precursor, H2S for sulfurization of Mo. We deposited Mo metal first on solid substrates and sulfurized the metal at high temperatures. The synthesized MoS2 films were almost perfectly uniform over the entire area of 2 inch wafer. We also synthesized MoS2 films with MoO3 and H2S for high quality films. We could synthesize MoS2 films up to 15cm with high uniformity and excellent electrical properties. In order to lower the synthesis temperature, we adopted plasma enhanced CVD method. Down to 150℃, we could synthesize uniform films of MoS2 directly on a plastic substrate (polyimide). ReS2 could be synthesized on a flexible glass substrate at a low temperature directly due to the low evaporation temperature of the precursor. We also synthesized large area NbS2 thin films as the transparent electrode for 2D metal chalcogenide semiconductor device. We characterized the various optical and electrical properties of the synthesized films. |
