| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 반도체 재료 |
| 제목 | Non-polar a-plane wurtzite nitride thin films grown on Si(100): An approach to eliminate the polarization effect |
| 초록 | III-nitride semiconductors attract interest as the most promising materials for optoelectronic devices covering the region infrared to ultraviolet. In the past, wurtzite III-nitrides growth was focused on c-axis oriented-film using substrates of polar-plane crystal with hexagonal symmetry, e.g., c-sapphire and 6H-SiC. However, nitride-based devices employ heterostructures grown along the polar [0001] direction, resulting in the formation of strong electrostatic fields, parallel to the growth direction due to the formation of fixed sheet charges at the corresponding interfaces or surfaces. Practically, the spontaneous and piezoelectric polarization effect in c-axis III-nitride quantum wells tends to modify the band structure, which causes a red-shift in its light emission. This phenomenon is due to charge separation of electron-hole pairs by internal electrical field. A method to eliminate the polarization effect is to grow the related-GaN compounds on non-polar plane substrates. We fabricated III-nitride films on Si(100) substrates by pulsed laser deposition (PLD). We successfully obtained non-polar a-plane III-nitride films on Si substrate using special buffer layer of rock-salt structure. Details of the film growth and of their optical properties will be discussed. The non-polar plane GaN, which is free from polarization effect by controlling the growth plane, is expected to promote the fabrication of III-nitride based optoelectronic devices on silicon. |
| 저자 | Song1, Jeong-Hwan2 |
| 소속 | 1Dept. of Information & Electronic Materials Engineering, 2PaiChai Univ. |
| 키워드 | GaN; Non-polar plane; buffer layer; Si |
