| 초록 |
Rare earth (RE) atoms, when doped into a suitable host material, often luminesce at technologically important wavelength (e.g., Er: 1.5 um, Tm: 1.4, 1.6 um, Nd: 0.9 um). As the luminescence is due to parity-forbidden, core-level intra-4f transitions, the luminescence spectra are relatively sharp, and nearly independent of temperature and the host material. Thus, RE doping can turn many optically inert materials into optically active materials operating at important wavelength. In this presentation, rare earth doping of Si nanocrystals (nc-Si) will be discussed. Emphasis will be placed on nc-Si - RE interaction that allows RE atoms to be excited via carriers in nc-Si, and how such interaction can be used to design materials and devices for microphotonic applications |
