| 초록 |
Zinc oxide (ZnO) films have been studied with a focus on an application to transparent electrodes in display and transparent conductive oxide (TCO) coating for orgainc photovoltaic cells (OPV cells). In the present study, In-doped zinc oxide (IZO) thin films are deposited on corning 7059 glass substrate by pulsed DC magnetron sputtering at fixed H2/(H2+Ar) flow ratio of 0.33 between H2 and Ar gas-flow rates with fixed total (H2+Ar) flow rate during the sputtering. The samples produced were then treated by rapid thermal annealing (RTA) process at different temperatures ranging from 400 to 650 ℃ with the addition of argon. We analyze the structural and optical, and electrical properties of IZO:H. The OPV cells consisted of Aluminum (Al), Lithium Fluoride (LiF), poly(2-methoxy-5-(2’-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) + [6, 6]-phenyl C61-butyric acid methyl ester (PCBM), poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate (PEDOT:PSS), and IZO:H, which were used as the top cathode, cathode interfacial layer (CIL), active photovoltaic layer (PVL), hole transport layer (HTL) and bottom anode, respectively. The current density (J)-voltage (V) characteristics for the OPV cells with commercial ITO anode (η = 0.48%) and IZO:H anode (η = 0.52%). The results of IZO:H films were good compared with the case of using commercial ITO. |
