| 초록 |
Nowadays, the controlled isolation and assembly of 2 dimensional (2D) materials into van der Waals (vdW) heterostructure is key factor of design and fabrication of new devices based on 2D materials and in this concept clean interface between 2D materials makes best device performance. As usual, h-Bn/G/h-BN vdW heterostructure needs supporting layer, PMMA like polymer, in all steps which are stacking 2D materials layer by layer, so there is core problem on making clean interface within vdW heterostructure. We report that advanced transfer method using PDMS stamp by direct transfer h-BN on as grown germanium single crystalline graphene. By using new technique, we can get clean interface between h-BN/G interface and decrease transfer steps and polymer residue by supporting layer free transfer method that vdW heterostructure can made comfortable and get clean interface. Furthermore, by using as grown germanium graphene by CVD method we already know about directionality of graphene so there is advantage in manufacturing device. In this advanced transfer method, we can get large-area h-BN/G heterostructure by direct transferred large-area h-BN flake compare to original transfer method. |
