| 학회 |
한국고분자학회 |
| 학술대회 |
2008년 가을 (10/09 ~ 10/10, 일산킨텍스) |
| 권호 |
33권 2호 |
| 발표분야 |
분자전자소재 및 소자기술의 현황(분자전자 부문위원회) |
| 제목 |
Origin of bistability in polyfluorene based organic bistable memory devices |
| 초록 |
Origin of bistability in polyfluorene (PFO) based organic bistable memory devices (OBDs) was investigated by changing the bulk properties of PFO and metal electrodes. Two different PFOs with and without internal trap sites and two metal electrodes of Al and Au were used. Bistability was induced in all devices when Al was deposited on PFO, while bistable switching was observed only in the PFO device with internal trap sites when Au was deposited on PFO. Therefore, both internal trap site formation and organic-metal interface were critical to bistability in PFO based OBDs. |
| 저자 |
주철웅1, 전순옥1, 육경수1, 이준엽2
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| 소속 |
1단국대, 2고분자 시스템 공학과 |
| 키워드 |
internal trap sites; bistable memory devices
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| E-Mail |
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