| 초록 |
Two-dimensional (2D) semiconductor materials with discrete bandgap have attracted much attention from many researchers owing to their interesting physical properties and potentials for future nanoscale electronics. Many of field effect transistors (FETs) have thus been reported. Several attempts to fabricate 2D complementary (CMOS) logic inverters have been made, too. Here, we initially adopted n- and p-channel FET couples for hetero CMOS inverter: 1. n-MoS2 and p-MoTe2 couple, 2. n-IGZO thin film and p-MoTe2 couple. Our p-channel FET with nanosheet α-MoTe2 showed much high ON-current, since we used a properly-deep work function metal, platinum (Pt), for S/D contact. Our n-channels use Au or Ti/Au contacts for S/D electrode. As a main final CMOS inverter, we attempted p-to-n type conversion in MoTe2 flake by H doping in selective region atomic layer deposition (ALD). As a result, we achieved MoTe2-based homo PN junction diode and CMOS inverter as well, using ALD Al2O3 in a selected region where H was doped to convert MoTe2 from p-type to n-type. More details are discussed in the meeting. |
