| 초록 |
We demonstrated the origin and mechanism of the hysteresis behavior frequently presented during device operation in the organic field-effect transistors (OFETs) based on the polymer gate dielectrics. Although, up to date, polar functionalities such as hydroxyl groups in the polymer gate dielectrics were well known to induce the hysteresis during device operation, there have been few investigations discussed in detail how end-functionalities at the polymer surface, which confronted semiconductor layer to form the interface, and the bulk composed of these functionalities had a influence on the hysteresis, respectively. Therefore, in this study, we controlled the hydrophobicity of the polymer varying with the amount of hydroxyl groups, and also used ultrathin polymer/SiO2 bilayer and thick single polymer as the structure of gate dielectric, so that the hysteresis behavior was divided into each contribution to the hydroxyl groups at the polymer surface and in the bulk. |
