| 학회 | 한국화학공학회 |
| 학술대회 | 2017년 봄 (04/26 ~ 04/28, ICC 제주) |
| 권호 | 23권 1호, p.1068 |
| 발표분야 | 재료 |
| 제목 | Anisotropic etching of nanometer-scale patterned MTJ stacks under various etch gases |
| 초록 | Spin transfer torque magnetic random access memory (STT-MRAM) has been known as alternative memory devices for next generation. The characteristics such as high processing speed, low power consumption, high density and non-volatility can make it useful and powerful. Magnetic tunnel junction (MTJ) stack is a crucial component in STT-MRAM which usually contains the multilayers including at least two magnetic layers and a tunneling barrier layer. Although the STT-MRAM device has a lot of these potential, the issue of scaling down using etching process has been remained difficult. In this study, MTJ multilayer patterned with nanometer-scale E-beam resists was etched by using inductively coupled plasma reactive ion etching. The etch characteristics will be investigated at the various etch gas and process conditions. This research was supported by Nano·Material Technology Development Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT and Future Planning.(2009-0082580) |
| 저자 | 최재상, 이재용, 조두현, 정지원 |
| 소속 | 인하대 |
| 키워드 | 화공소재 전반 |
| 원문파일 | 초록 보기 |
