| 초록 |
For enabling soft electronic devices and systems, it should be developed various electronic components such as integrated circuits and non-volatile memory as well as operating under low bias conditions. High-k fluorinated polymer dielectrics such as P(VDF-TrFE) and its derivatives are typically used as low-voltage operating organic field-effect transistors (OFETs) due to their high dielectric constant and high breakdown strength. However, those PVDF-based polymers typically adversely affected the performance of N-type OFETs by depleting electrons at the semiconductor-dielectric interface and large charge injection barrier due to the high polarity of the C-F bonds. Here we studied the problem which leads to electron-depletion phenomenon at the interface in order to improve performance of N-channel OFETs. Moreover, storage capacity of non-volatile memory based on OFETs was also remarkably increased by incorporation of charge injection layer |
