| 학회 |
한국재료학회 |
| 학술대회 |
2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 |
23권 2호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Effect of the growth temperature on the characteristics of p-type InN nanowires grown by MOCVD |
| 초록 |
Due to their encouraging properties like low band gap (~ 0.65 eV) and extremely high electron mobility (~ 12000 cm2/Vs) at room temperature, Indium Nitride (InN) offers to be a prolific candidate in the field of ultrahigh speed optoelectronics devices operating in the infrared (IR) spectral region. In this article, structural and optoelectrical properties of vertical and horizontal nanowires are investigated. Both the type of nanowires are realized using MOCVD system. Before MOCVD deposition an In seed layer is deposited using DC sputtering system. Further studies in crystalline properties reveals a probable temperature dependency of nanowire growth direction. Photoluminescence spectra presents the electronic band gap of the grown nanowires to be 0.8 eV. Though the peak positions for both the type are same nearly 1550 nm but the integrated PL intensity of vertical nanowires are found to be higher in comparison to horizontal ones. This can be attributed to the larger active area associated to vertical nanowires. TEM study reveals a thin native In2O3 layer due to high reactivity of In in air. Furthermore to study the opto-electronic device applicability photocurrent is measured for both the types of nanowires. Vertical nanowires records a high photocurrent than horizontal. This enhancement in photocurrent can be attributed to higher density of nanowires and larger active area offered by vertical nanowires. |
| 저자 |
Dae-Young Um1, Raju Nandi2, San Kang3, Jae-Kwan Sim4, Jun-Yong Jo1, Hyeeun Kim2, Pil-Jun Kim3, Jung Hoon Yang4, Suel Lee1, Cheul-Ro Lee2
|
| 소속 |
1School of Advanced Materials Engineering, 2Engineering College, 3Research Center for Advanced Materials Development (RCAMD), 4Chonbuk National Univ. |
| 키워드 |
p-InN nanowires; MOCVD; vertical and horizontal growth; photocurrent
|
| E-Mail |
|
